4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers
SAM.GOV Due: April 21, 2025 at 09:00 PM UTC
In-Active Sources Sought Source Url

Summary

NASA Glenn Research Center is seeking information from potential sources for the fabrication of specific integrated silicon carbide (SiC) device structures, including JFETs and resistors, on 100 mm diameter 4H-SiC wafers. This opportunity is aimed at businesses capable of executing a designated fabrication process flow using NASA-provided design files. The resulting integrated circuits will be utilized in prototype extreme-environment electronic systems for NASA missions. Interested contractors, particularly those from small business categories and Historically Black Colleges and Universities or Minority Institutions, are encouraged to submit capability statements detailing their relevant experience and resources. This is a sources sought notice, and no solicitation currently exists.
Description

NASA Glenn Research (GRC) is hereby soliciting information from potential sources for fabrication of particular integrated SiC device structures (JFETs and resistors) via a particular fabrication process flow to the desired specifications on NASA-provided 100 mm diameter 4H-SiC epilayered wafers

Entities
NAASA
National Aeronautics and Space Administration
NAICS
541715
Set Aside
None
Place of Performance
Point of Contact
Full Name Email Phone Type
Claude David [email protected] primary
Eric Hartman [email protected] secondary