4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers
SAM.GOV Due: April 29, 2025 at 09:00 PM UTC
In-Active Sources Sought Source Url

Summary

NASA Glenn Research Center is seeking information from potential sources for the fabrication of integrated silicon carbide (SiC) device structures, specifically JFETs and resistors, on 100 mm diameter 4H-SiC wafers. This opportunity involves a specific fabrication process flow designated as the 'Gen. 12b' prototype wafer fabrication run, utilizing NASA-provided device-layout design files. Interested contractors should have capabilities in semiconductor device fabrication and relevant experience, as the resulting integrated circuits will be used for prototype extreme-environment electronic systems for NASA missions. This sources sought notice is aimed at determining the level of competition and potential small business set-asides, encouraging responses from small, 8(a), women-owned, service-disabled veteran-owned, economically disadvantaged women-owned, and HUBZone businesses.
Description

Amendment 1: Extending Sources Sought notice response deadline to 4/29/2025 at 5:00pm ET.

NASA Glenn Research (GRC) is hereby soliciting information from potential sources for fabrication of particular integrated SiC device structures (JFETs and resistors) via a particular fabrication pro

Entities
NAASA
National Aeronautics and Space Administration
NAICS
541715
Set Aside
None
Place of Performance
Point of Contact
Full Name Email Phone Type
Claude David [email protected] primary
Eric Hartman [email protected] secondary